The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6-4.2GHz band amplifiers. The device offers high reliability and provides high output power, high power gain and high power added efficiency.
The MGFC45V3642A is a C‑band internally matched GaAs power FET designed for 3.6‑4.2 GHz band amplifiers. It offers 32 W typical output power, 11 dB linear gain, 36 % power‑added efficiency, and low distortion (IM3 ≈ ‑45 dB). The device is supplied in a hermetically sealed metal‑ceramic package for high reliability.
Safety notes emphasize proper circuit design, use of non‑flammable materials, and placement of auxiliary circuits. Mitsubishi Electric disclaims liability for inaccuracies and advises contacting an authorized distributor for the latest product information.