The MGFK44A4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFK44A4045 is an internally impedance‑matched GaAs power FET designed for 14.0‑14.5 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability and provides up to 25 W output power with typical linear gain of 6 dB.
Mitsubishi Electric emphasizes safety, recommending careful circuit design, use of non‑flammable materials, and adherence to maximum ratings such as VDS=10 V, ID=6.0 A, and a drain current limit of 20 A. The document includes detailed electrical characteristics, bias conditions, and export control notices.
| Frequency band | 14.0 - 14.5 GHz |
|---|---|
| Output power | 25 W |
| Linear power gain (GLP) | 6 dB |
| Power added efficiency (PAE) | 17 % |
| Drain current (ID) max | 20 A |
| Gate‑to‑drain breakdown voltage (VDS) | -15 V |
| Storage temperature range | -65 to +175 °C |
It operates in the 14.0‑14.5 GHz band.
The device delivers up to 25 W of output power.
Recommended bias is VDS = 10 V, ID = 6.0 A, and RG = 250 Ω.
Users should keep safety first, avoid fire hazards, and follow the maximum ratings and temperature limits.