MGFC47A7785 is a high-power GaAs FET operating at 7.7 GHz to 8.5 GHz. It is designed for Class A operation and has a power output of 47W. It also features high output power, high power gain and high power added efficiency. It is suitable for satellite earth station communication transmitters and VSATs.
The MGFC47A7785 is a hermetically sealed, metal‑ceramic GaAs power FET designed for solid‑state power amplifiers used in satellite earth‑station communication transmitters and VSAT systems. It operates in the 7.7‑8.5 GHz band, provides up to 47 W output power, and features Class A operation, high gain, and a typical power added efficiency of 30 %.
Mitsubishi Electric emphasizes safety in circuit designs, recommending non‑flammable materials, proper placement of auxiliary circuits, and adherence to specified bias conditions (VDS = 10 V, ID ≈ 9.8 A). The document also includes extensive electrical characteristics, S‑parameter data, and legal disclaimer notices.
| Frequency band | 7.7‑8.5 GHz |
|---|---|
| Typical output power (PidB) | 46.7 dBm |
| Typical linear power gain (GLP) | 5.70 dB |
| Typical power added efficiency (PAE) | 30 % |
| Gate‑to‑drain breakdown voltage (VGD) | -20 V |
| Gate‑to‑source breakdown voltage (VGS) | -10 V |
| Reverse gate current (IGR) | -130 mA |
| Forward gate current (IGE) | 168 mA |
| Total power dissipation (Pt) | 168 W |
| Storage temperature range | -65 °C to +175 °C |
| Recommended drain‑source voltage (VDS) | 10 V |
The recommended bias is VDS = 10 V with a drain current of approximately 9.8 A.
The typical power added efficiency (PAE) is 30 %.
It operates in the 7.7‑8.5 GHz band.