The MGFK37V4045 is a internally matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The device features high output power, high linear power gain and high power added efficiency.
The MGFK37V4045 is an internally impedance‑matched GaAs power FET designed for 14.0‑14.5 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability and provides up to 5.5 W output power with 5.5 dB linear gain and 17 % power‑added efficiency.
Electrical characteristics include a typical drain current of 2.4 A, a maximum drain current of 6.6 A, and a gate‑to‑drain breakdown voltage of 215 V. The device is rated for operation at 25 °C with a thermal resistance of 3.5 °C/W and includes safety notices regarding proper circuit design and handling.
| Frequency Band | 14.0‑14.5 GHz |
|---|---|
| Typical Output Power | 5.5 W |
| Linear Power Gain (typ) | 5.5 dB |
| Power Added Efficiency (typ) | 17 % |
| Maximum Drain Current | 6600 mA |
| Gate‑to‑Drain Breakdown Voltage | 215 V |
It is designed for the 14.0‑14.5 GHz band.
The typical output power is 5.5 W.
The typical PAE is 17 %.
The maximum drain current is 6600 mA.