The MGFK35V4045 is an internally impedance-matched GaAs power FET specially designed for use in 14.0 - 14.5 GHz band amplifiers. It features high output power, high linear power gain and high power added efficiency.
The MGFK35V4045 is a hermetically sealed, metal‑ceramic GaAs power FET designed for 14.0‑14.5 GHz band amplifiers. It features internal 50 Ω matching, flip‑chip mounting, and delivers up to 3.5 W output power with a typical linear gain of 6.4 dB and a power‑added efficiency of 20 %.
Key specifications include a drain‑to‑source breakdown voltage of 215 V, a maximum drain current of 3500 mA, and typical transconductance of 700‑1000 mS. Recommended bias conditions are VDS = 10 V and ID = 1.2 A. The datasheet also provides S‑parameter data, safety notices, and contact information for Mitsubishi Semiconductor distributors.
| Frequency band | 14.0 – 14.5 GHz |
|---|---|
| Typical output power | 3.5 W |
| Typical linear power gain | 6.4 dB |
| Power‑added efficiency | 20 % |
| Gate‑to‑drain breakdown voltage | 215 V |
| Maximum drain current | 3500 mA |
The typical output power is 3.5 W at 14.0‑14.5 GHz.
The typical linear power gain is 6.4 dB in the 14.0‑14.5 GHz band.
Recommended bias is VDS = 10 V with ID = 1.2 A.
The maximum drain current is 3500 mA.