MGFC45V3436A is a 32W power gain GaAs FET for use in 3.4-3.6GHz band amplifiers. It features high output power, high power gain, high power added efficiency and low distortion.
The MGFC45V3436A is an internally impedance‑matched GaAs power FET designed for 3.4‑3.6 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability and provides up to 32 W output power.
Key specifications include a typical linear power gain of 12 dB, power‑added efficiency of 36 %, and third‑order intermodulation (IM3) of –45 dBc. Recommended bias is VDS = 10 V, ID = 8 A with a gate resistance of 250 Ω. Absolute maximum ratings list a gate‑to‑drain breakdown voltage of 15 V and a drain current limit of 25 A. Safety warnings emphasize proper circuit design and handling.
| Frequency band | 3.4 – 3.6 GHz |
|---|---|
| Typical output power | 32 W @ 3.4‑3.6 GHz |
| Linear power gain (GLP) | 12.0 dB @ 3.4‑3.6 GHz |
| Power‑added efficiency (PAE) | 36 % @ 3.4‑3.6 GHz |
| Third‑order intermodulation (IM3) | -45 dBc @ Po=34.5 dBm |
| Gate‑to‑drain breakdown voltage (Vgd0) | 15 V |
| Gate‑to‑source breakdown voltage (Vgs0) | -45 V |
| Maximum drain current (ID) | 25 A |
| Reverse gate current (IGR) | -80 mA |
| Forward gate current (IGF) | 168 mA |
| Total power dissipation (PT) | 150 W |
The gate‑to‑drain breakdown voltage is rated at 15 V.
Typical linear power gain is 12.0 dB at 3.4‑3.6 GHz.