The BA01202 is a GaAs HBT hybrid IC designed as a high‑gain, high‑power RF amplifier for N‑CDMA hand‑held phones. It features low supply voltage, internal input and output matching, and a two‑stage architecture.
Key specifications include a supply voltage of 3.2 V, maximum output power of 28 dBm, gain of 25 dB at that power level, and operation over 1850‑1910 MHz. Absolute maximum ratings cover a supply voltage of 6 V, operating temperature from –30 °C to +95 °C, and storage temperature up to +125 °C.
| Supply voltage (Vc) | 3.2 V |
|---|---|
| Maximum output power (Po) | 28 dBm |
| Gain (Gp) | 25 dB @ Po=28 dBm |
| Frequency range | 1850‑1910 MHz |
| Total current (Ict) | > 520 mA |
| Return loss | 6 dB |
| Operating temperature | -30 °C to +95 °C |
The device operates with a supply voltage of 3.2 V.
The maximum output power is 28 dBm.
It can operate from –30 °C up to +95 °C.
It covers the 1850 MHz to 1910 MHz band.