Mitsubishi Electric RA06H8285M RF Power Module Datasheet

The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range. It features enhancement-mode MOSFET transistors, broadband frequency range, low-power control current, and the ability for linear operation.


Mitsubishi Electric RA06H8285M RF Power Module Datasheet - cover page
Brand
Mitsubishi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
181 KB
Published
21 March, 2012
Updated
28 September, 2023
MD5 checksum
0EF89AE06ACCA5E2B374A7B4FCD8EA92

About this manual

The RA06H8285M is a 6‑watt RF MOSFET amplifier module designed for 12.5‑V mobile radios operating in the 820‑851 MHz band. It features enhancement‑mode MOSFET transistors, low gate‑drive current and a compact alumina substrate mounted on a copper flange.

The document provides maximum ratings, electrical characteristics, typical performance graphs, mechanical dimensions, recommended mounting procedures, thermal design guidance and safety precautions for reliable integration into RF equipment.

What's inside

  • Description
  • Features
  • Maximum Ratings
  • Electrical Characteristics
  • Typical Performance
  • Outline Drawing
  • Test Block Diagram
  • Recommendations and Application Information
  • Oscillation
  • Precautions for the Use of Mitsubishi Silicon RF Power Devices

Specifications

Frequency Range820‑851 MHz
Output Power6 W (VDD=12.5 V, VGG=5 V)
Total Efficiency≥35 %
Gate Current (IGG)1 mA (typ) at VGG=5 V
Module Size60.5 × 14 × 6.4 mm
Gate Voltage (VGG) Range0‑5 V
Storage Temperature Range-40 °C to +110 °C

Frequently asked questions

What gate voltage is needed for nominal output power?

The nominal 6 W output power is achieved at a typical gate voltage of about 4.5 V and a maximum of 5 V.

What indicates RoHS compliance on this product?

RoHS compliance is indicated by the letter “G” after the lot marking.

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