RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. It has enhancement-mode MOSFET transistors, output power and current increases as gate voltage increases. With a gate voltage around 0.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 1.5V (typical) and 2.0V (maximum). At VGG=2.0V, the typical gate current is 1mA.
The RA01L9595M is a 1.4‑watt RF MOSFET amplifier module designed for RFID reader/writer applications. It operates in the 952‑954 MHz band and can be powered directly from a battery to the drain of the enhancement‑mode MOSFET transistors.
The document provides maximum ratings, electrical characteristics, typical performance curves, mechanical dimensions, handling precautions, and RoHS compliance information for designers and engineers.
| Frequency Range | 952‑954 MHz |
|---|---|
| Output Power (Pout) | 1.4 W |
| Total Efficiency | 35 % |
| Gate Voltage (Vgg) | up to 3.3 V |
| Drain Voltage (Vdd) | up to 2.0 V |
| Input Power (Pin) | 50 mW |
| Package Size | 9.1 × 9.2 × 1.8 mm |
| RoHS Compliance | Yes |
The module operates from 952 MHz to 954 MHz.
It delivers a typical output power of 1.4 W.
Yes, the module is RoHS compliant.