This document describes the features and characteristics of the RA01L8693MA silicon RF power semiconductor, including its application, voltage requirements, and output power.
The RAO1L8693MA is a 1.4‑watt RF MOSFET amplifier module designed for RFID reader/writer applications. It operates in the 865‑928 MHz band and features low‑power control current and a compact 9.1 × 9.2 × 1.8 mm package.
The document provides maximum ratings, electrical characteristics, typical performance curves, mechanical outline, thermal design recommendations, and reflow soldering guidelines, along with safety and RoHS compliance information.
| Frequency Range | 865‑928 MHz |
|---|---|
| Output Power (typical) | 1.4 W |
| Gate Voltage (typical) | 2.0 V |
| Drain Voltage (max) | 2.0 V |
| Package Size | 9.1 × 9.2 × 1.8 mm |
The module operates from 865 MHz to 928 MHz.
The typical gate current is 1 mA at Vgg = 2.0 V.
Mitsubishi recommends up to three reflow soldering cycles.