The RA03M8087M is a 3.6W RF MOSFET Amplifier Module from RaSilicon. It operates with a supply voltage of 7.2V and is suitable for portable radios in the 806-870MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
The RA03M8087M is a 3.6‑watt RF MOSFET amplifier module designed for 7.2‑volt portable radios operating in the 806‑870 MHz band. It uses enhancement‑mode MOSFET transistors and can be driven directly from a battery, with output power controlled by gate voltage or input power.
The document provides maximum ratings, electrical characteristics, typical performance curves, mechanical construction details, mounting recommendations, thermal design guidelines, and safety precautions for reliable integration of the module into RF equipment.
| Frequency Range | 806‑870 MHz |
|---|---|
| Total Efficiency | 32 % |
| Gate Current | 1 mA (typical) |
| Input Power Rating | 70 mW |
| Package Size | 30 × 10 × 5.4 mm |
| Recommended Mounting Torque | 1.8‑3.0 kgf·cm |
M2.6 screws should be tightened to a torque of 1.8 to 3.0 kgf·cm.
The module is sensitive to ESD voltages down to 1000 V, so precautions are required for voltages at or above this level.
RoHS compliance is indicated by the letter “G” after the lot marking.
The module case temperature should be kept below 90 °C for long‑term reliability.