RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module produced by RASilicon company. It has the following features: 1. The output power and drain current of the module increase as the gate voltage increases; 2. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially; 3. At VGG=3.5V, the typical gate current is 1 mA.
The RA03M9595M is a 3‑watt RF MOSFET amplifier module operating in the 952‑954 MHz band. It features enhancement‑mode MOSFET transistors, low‑power control current, and a compact 30 × 10 × 5.4 mm package.
The document provides electrical characteristics, maximum ratings, mechanical construction details, recommended mounting and thermal design, as well as safety and RoHS compliance information for designers integrating the module into RF equipment.
| Frequency Range | 952 – 954 MHz |
|---|---|
| Output Power | 3.0 W |
| Drain Current | 2.0 A |
| Gate Current | 1 mA (typ) |
| Package Size | 30 × 10 × 5.4 mm |
| Operating Temperature Range | -30 °C to +90 °C |
| Storage Temperature Range | -40 °C to +110 °C |
| Mounting Screw Size & Torque | M2.6, 1.8–3.0 kgf·cm |
The module operates from 952 MHz to 954 MHz.
It can deliver up to 3.0 W of output power.
Use M2.6 screws tightened to 1.8–3.0 kgf·cm.