Mitsubishi Electric RA05H8693M RF Power Amplifier Module Datasheet

RA05H8693M is a Silicon RF Power Semiconductors that complies with RoHS standards. It operates in the frequency range of 866-928MHz with a power of 5W and a voltage of 14V. The amplifier uses a 3-stage configuration.


Mitsubishi Electric RA05H8693M RF Power Amplifier Module Datasheet - cover page
Brand
Mitsubishi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
108 KB
Published
21 March, 2012
Updated
30 September, 2023
MD5 checksum
FD669495B8302AFEA9E09AFF71BCA0DB

About this manual

The RA05H8693M is a 5 W silicon RF power MOSFET amplifier module operating from 866 MHz to 928 MHz. It features enhancement‑mode MOSFET transistors, a compact 60.5 × 14 × 6.4 mm package, and RoHS compliance.

The document provides maximum ratings, electrical characteristics, typical performance graphs, mechanical construction details, recommended heat‑sink mounting, ESD precautions, and safety warnings for designers integrating the module into RF equipment.

What's inside

  • Description
  • Features
  • Maximum Ratings
  • Electrical Characteristics
  • Typical Performance
  • Outline Drawing
  • Test Block Diagram
  • Recommendations and Application Information
  • Output Power Control
  • Safety Precautions

Specifications

Frequency Range866 – 928 MHz
Output Power5 W
Package CodeH11S
Module Size60.5 × 14 × 6.4 mm
Input Power (Pin)4 mW
Gate Voltage (minimum)3.5 V

Frequently asked questions

What torque should be used for the mounting screws?

M3 screws should be tightened to a torque of 4.0 to 6.0 kgf‑cm.

How is RoHS compliance indicated on this product?

RoHS compliance is indicated by the letter “G” after the Lot Marking.

What ESD voltage level is the module sensitive to?

The module is sensitive to ESD voltages down to 1000 V and requires appropriate precautions.

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