CM1800HCB-34N is a high voltage insulated gate bipolar transistor module produced by Mitsubishi Electric. It has a rated current of 1800A and a rated voltage of 1700V. It uses an AISiC baseplate and has Trench Gate IGBT and soft reverse recovery diodes. The module is mainly used in traction drives, high reliability converters/inverters and DC choppers.
This datasheet describes the Mitsubishi CM1800HCB-34N high‑voltage insulated‑gate bipolar transistor (HVIGBT) module, intended for traction drives, high‑reliability converters/inverters, and DC choppers. It lists maximum ratings, electrical characteristics, thermal limits, and mechanical dimensions.
Key performance data include collector‑emitter voltage, gate‑emitter voltage, continuous and pulse current ratings, power dissipation, and thermal resistance. Mechanical details such as mounting torque, mass, and clearance are also provided, along with characteristic curves for switching and safe operating area.
| Continuous collector current (Ic) | 1800 A |
|---|---|
| Operating temperature range (Top) | -40 °C to +125 °C |
| Thermal resistance, junction‑to‑case (IGBT part) | 9.0 K/KW |
| Mass | 1.5 kg |
The continuous collector current rating is 1800 A.
It can operate from –40 °C up to +125 °C (top operating temperature).
The junction‑to‑case thermal resistance is 9.0 K/KW.