CM1200HCB-34N is a high voltage insulated gate bipolar transistor module produced by Mitsubishi Electric. It has a maximum collector current of 1200A and a maximum collector-emitter voltage of 1700V. It is suitable for applications such as traction drives, high reliability converters/inverters and DC choppers.
The CM1200HCB-34N is a high‑power, insulated‑type HVIGBT module designed for traction drives, converters, inverters and DC choppers. It features a trench‑gate IGBT (CSTBT™) and a soft‑reverse‑recovery diode, offering high voltage and current capabilities.
The document provides maximum ratings, electrical and thermal characteristics, mechanical dimensions, and a series of performance curves such as output, transfer, and switching characteristics. It also includes capacitance, gate‑charge, and safe operating area data for design and integration purposes.
| Continuous collector current (Ic) | 1200 A |
|---|---|
| Junction temperature range | -40 ~ +150 °C |
| Input capacitance (Cies) | 220 nF |
| Storage temperature range | -40 ~ +125 °C |
It can carry up to 1200 A of continuous collector current.