CM800DZB-34N is a high voltage insulated gate bipolar transistor module produced by Mitsubishi Electric. The module adopts a 2-element package and uses a CSTBTTM soft recovery diode. It is mainly used in traction drives, high reliability converters/inverters, and DC choppers.
The CM800DZB-34N is a 4th‑generation high‑voltage insulated gate bipolar transistor (HVIGBT) module designed for high‑power switching applications such as traction drives, converters, inverters, and DC choppers. It features an insulated type construction with a trench‑gate IGBT and a soft reverse‑recovery diode.
The document lists maximum ratings, electrical and thermal characteristics, mechanical dimensions, and performance curves, including collector‑emitter voltage, gate‑emitter voltage, current limits, power dissipation, isolation voltage, and thermal resistance. It also provides switching time data and safe operating area limits for reliable design integration.
| Collector current (Ic) DC rating | 800 A |
|---|---|
| Mass | 1.0 kg |
The module can conduct a continuous collector current of 800 A and a pulse current of up to 1600 A.
The module is rated for an operating temperature range of –40 °C to +125 °C.