This is a RF characteristics data of MITSUBISHI MGF0907B
The document presents measured RF characteristics of the MGF0907B semiconductor for frequencies between 2.11 GHz and 2.17 GHz. Test conditions include a supply voltage of 10 V, drain current of 2.4 A, and temperatures of 25 °C and 80 °C.
It also includes the equivalent circuit model with component values such as 20 pF capacitors C1/C2, 71 nH inductors L1/L2, and a 51 Ω series resistor. The board material is FR4 with a thickness of 0.8 mm and a dielectric constant of 4.4.
| Capacitor C1, C2 | 20 pF |
|---|---|
| Capacitor C3, C4 | 100 pF |
| Capacitor C5 | 4.7 µF |
| Capacitor C6, C7 | 1000 pF |
| Capacitor C9 | 0.5 pF |
| Capacitor C10 | 2 pF |
| Inductor L1, L2 | 71 nH |
| Resistor R1 | 51 Ω |
| Resistor R2 | 500 Ω |
| Board material | FR4, thickness 0.8 mm |
| Dielectric constant | 4.4 |
| Test drain current (IDQ) | 2.4 A |
The data cover the 2.11 GHz to 2.17 GHz band.
Measurements were performed with a supply voltage of 10 V and a drain current of 2.4 A.