This document shows the RF characteristics data of MGF0921A, including frequency range, power output, and input power.
The document presents measured RF characteristics of the MGF0921A semiconductor under defined test conditions. It includes power output, ACLR, IM3/IM5 performance and an equivalent circuit model.
A test fixture description and component values for the measurement board are also given, along with the test voltage, bias current and temperature settings used during the evaluation.
| Frequency band | 1.85‑1.95 GHz |
|---|---|
| Test bias current (IDQ) | 0.5 A |
| Test temperature (Tc) | 25 °C |
| Board material | FR4, 0.8 mm thickness |
| Dielectric constant | 4.4 |
| Capacitor values (C1‑C4) | 20 pF each |
A bias current of 0.5 A (IDQ=0.5A) is used.
The device is tested at 25 °C (Tc=25deg.C).
The test board is made of FR4 with a dielectric constant of 4.4.