This document describes the 1/4 XB0ASB03A1BR Schottky Barrier Diode, which features a small package, low forward voltage, and short reverse recovery time. It is suitable for compact, low-profile circuit designs and can be used for rectification in DC/DC converters, surge absorption in compact motors, and protection against reverse battery connection.
The XB0ASB03A1BR is a 500 mA, 30 V Schottky barrier diode offered in a compact SOD‑323 package, ideal for low‑profile circuit designs. It features a low forward voltage (≈0.4 V at 500 mA) and a very short reverse‑recovery time of about 10 ns.
The datasheet lists the diode’s electrical characteristics, including peak reverse voltage, forward current limits, temperature ratings, and typical performance curves such as forward voltage versus current and reverse current versus voltage. Packaging information, marking rules, and application notes for DC‑DC converters, motor surge protection, and reverse‑polarity protection are also included. This manual is written in Chinese.
| Peak Reverse Voltage (VRRM) | 30 V |
|---|---|
| Reverse Voltage (DC) | 20 V |
| Average Forward Current (IF(AV)) | 0.5 A |
| Non‑continuous Forward Surge Current | 5 A |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| Forward Voltage at 100 mA (VF1) | 0.36 V |
| Forward Voltage at 500 mA (typical) | 0.4 V |
| Forward Voltage at 500 mA (max) | 0.46 V |
| Reverse Current at 20 V (max) | 100 µA |
| Inter‑Terminal Capacitance (Ct) at 10 V, 1 MHz | 12 pF |
| Reverse Recovery Time (trr) | 10 ns |
The diode can withstand a repetitive peak reverse voltage of 30 V.
The typical forward voltage is 0.4 V at 500 mA.
It is supplied in a small SOD‑323 package.
The diode can be stored from –55 °C up to +150 °C.