MRFG35003NT1 is a GaAs PHEMT RF power field-effect transistor designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. The device is unmatched and is suitable for use in Class AB linear base station applications. Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 300 mWatt Power Gain — 11.5 dB Efficiency — 25%.
The MRFG35003NT1 is a Gallium Arsenide PHEMT RF power field‑effect transistor designed for WLL/MMDS/BWA or UMTS driver applications. It operates from 1.8 GHz to 3.6 GHz and offers high gain, efficiency and linearity for Class AB base‑station use.
The document provides maximum ratings, thermal characteristics, detailed electrical parameters, S‑parameter data, package dimensions and revision history, along with contact information for Freescale Semiconductor support.
| Frequency range | 1.8 GHz – 3.6 GHz |
|---|---|
| Typical output power | 300 mW |
| Power gain | 11.5 dB |
| Drain‑source voltage (V_DSS) | 15 V |
| Gate‑source voltage (V_GS) | 5 V |
| Total device dissipation (P_D) @ 25 °C | 31 W |
| Storage temperature range | -65 °C to +150 °C |
| Operating case temperature range | -20 °C to +85 °C |
| Thermal resistance, junction‑to‑case (RθJC) | 18.5 °C/W |
| Drain efficiency | 25 % |
It operates from 1.8 GHz up to 3.6 GHz.
The typical output power is 300 mW.