This Freescale Semiconductor technical data document, Document Number MRF6S19140H Rev. 5, covers the MRF6S19140HR3 and MRF6S19140HSR3 N-channel enhancement-mode lateral RF power MOSFETs. The devices are designed for PCN and PCS base station applications at frequencies from 1930 to 1990 MHz and for TDMA, CDMA, and multicarrier amplifier applications.
The document includes maximum ratings, thermal characteristics, ESD protection classes, electrical characteristics, a test circuit schematic and component layout, typical performance curves, and series equivalent source and load impedance data. Features listed include internal matching, integrated ESD protection, RoHS compliance, and tape-and-reel packaging with the R3 suffix.
| Device Type | N-Channel Enhancement-Mode Lateral MOSFETs |
|---|---|
| Frequency Range | 1930 to 1990 MHz |
| Typical Output Power | 29 Watts Avg. |
| Typical Power Gain | 16 dB |
| Typical Drain Efficiency | 27.5% |
| Maximum VDD Operation | 32 Vpp |
| Storage Temperature Range | -65 to +150 °C |
| MRF6S19140HR3 Case | CASE 465B-03, STYLE 1 (NI-880) |
| MRF6S19140HSR3 Case | CASE 465C-02, STYLE 1 (NI-880S) |
| RoHS Compliance | Compliant |
| Tape and Reel | R3 suffix = 250 units per 56 mm, 13 inch reel |
They are designed for frequencies from 1930 to 1990 MHz.
The typical power gain is 16 dB.
The R3 suffix indicates tape and reel with 250 units per 56 mm, 13 inch reel.
Yes, the features list states RoHS Compliant.