MRFG35002N6T1 is a high performance RF power field effect transistor designed by Freescale Semiconductor for WLL/MMDS/BWA or UMTS driver applications. The device has good characteristics from 500 to 5000MHz and is suitable for Class AB and CPE applications.
The MRFG35002N6T1 is a Gallium Arsenide PHEMT designed for WLL/MMDS/BWA and UMTS driver applications. It delivers up to 1.5 W output at 3.5 GHz and is suitable for Class AB CPE use. The device is supplied in a tape‑and‑reel package (1000 units per 12 mm, 7‑inch reel).
Key electrical characteristics include a drain‑source voltage of 8 V, gate‑source voltage of 5 V, power gain of 10 dB, drain efficiency of 27 % and an ACPR of –41 dBc at a 5 MHz offset. Thermal resistance (junction‑to‑case) is 15.2 °C·W⁻¹ and the part is rated for storage from –65 °C to +150 °C.
| Drain‑Source Voltage (Voss) | 8 V |
|---|---|
| Gate‑Source Voltage (Vgs) | 5 V |
| Input Power Pin | 22 dBm |
| Storage Temperature Range | -65 °C to +150 °C |
| Operating Case Temperature Range | -20 °C to +85 °C |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 15.2 °C·W⁻¹ |
| Power Gain | 10 dB |
| Drain Efficiency | 27 % |
| ACPR @ 5 MHz Offset | -41 dBc |
| Typical Output Power | 1.5 W at 3.5 GHz |
It is characterized from 500 MHz to 5000 MHz.
The typical power gain is 10 dB.
The drain efficiency is 27 %.
It is supplied in tape‑and‑reel format, 1000 units per 12 mm, 7‑inch reel.