freescale MRFG35002N6T1 Gallium Arsenide PHEMT Manual

Update: 30 September, 2023

MRFG35002N6T1 is a high performance RF power field effect transistor designed by Freescale Semiconductor for WLL/MMDS/BWA or UMTS driver applications. The device has good characteristics from 500 to 5000MHz and is suitable for Class AB and CPE applications.


Brand: Freescale manuals

File format: PDF

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MD5 Checksum: 22256D5C565A2A364F69D65CFFEEA83E

Publication date: 07 January, 2012

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PDF Link: freescale MRFG35002N6T1 Gallium Arsenide PHEMT Manual PDF

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