MRFG35010NT1 is an RF power field effect transistor designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is suitable for use in Class AB linear base station applications, and it features high gain, high efficiency, and high linearity.
The datasheet describes the MRFG35010NT1 GaAs PHEMT RF power transistor designed for WLL/MMDS/BWA or UMTS driver applications, covering its electrical ratings, thermal data, and mechanical dimensions.
It includes maximum ratings, typical electrical characteristics, S‑parameter data, package dimensions, revision history, and Freescale contact information.
| Drain‑Source Voltage (Voss) | 15 V |
|---|---|
| Gate‑Source Voltage (Ves) | 5 V |
| Output Power | 900 mW |
| Power Gain | 10 dB |
| Efficiency | 28 % |
| Frequency Range | 1.8 – 3.6 GHz |
The maximum drain‑source voltage is 15 V.
The typical output power is 900 mW.
It operates from 1.8 GHz to 3.6 GHz.
The device provides a power gain of 10 dB.