MRF6S23140HR3 MRF6S23140HSR3 is a N-Channel Enhancement-Mode Lateral MOSFETs produced by Freescale Semiconductor, suitable for CDMA base station applications with frequencies from 2300 to 2400 MHz, suitable for WiMAX, WiBro and multicarrier amplifier applications.
The Freescale MRF6S23140HR3 and MRF6S23140HSR3 are N‑channel lateral MOSFETs designed for CDMA base‑station applications operating between 2300 MHz and 2400 MHz. They are suitable for WiMAX, WiBro and multicarrier amplifier use in Class AB and Class C WLL configurations.
The document provides maximum ratings, thermal and electrical characteristics, typical performance graphs, test circuit schematics, and revision history. It also includes RoHS compliance information and contact details for Freescale support worldwide.
| Drain‑Source Voltage (Voss) | -0.5 V to +68 V |
|---|---|
| Gate‑Source Voltage (Ves) | -0.5 V to +12 V |
| Storage Temperature Range | -65 °C to +150 °C |
| Operating Junction Temperature (Ty) | 225 °C |
| Power Gain | 15.2 dB |
| Drain Efficiency | 25 % |
| Third‑Order Intermodulation (IM3) @ 10 MHz offset | -37 dBc |
| Adjacent Channel Power Ratio (ACPR) @ 5 MHz offset | -40 dBc |
They are designed for CDMA base‑station applications with frequencies from 2300 MHz to 2400 MHz.
Yes, the devices are RoHS compliant.
A R3 suffix reel contains 250 units per 56 mm, 13‑inch reel.