The DS1245Y/AB 1024k Nonvolatile SRAM features 10 years minimum data retention in the absence of external power and is automatically protected during power loss. It replaces 128k x 8 volatile static RAM, EEPROM or Flash memory, has unlimited write cycles, and is low-power CMOS. Read and write access times are as fast as 70 ns. The lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
The DS1245Y/AB is a 1024‑kbit nonvolatile SRAM with a built‑in lithium backup cell, offering 10‑year data retention and unlimited write cycles. It replaces traditional volatile SRAM, EEPROM, or flash memory in applications that require data preservation without power.
The device is offered in a 32‑pin DIP or a 34‑pin PowerCap Module package, with full electrical specifications—including supply voltage, timing, leakage, and capacitance—provided for both commercial (0 °C‑70 °C) and industrial (‑40 °C‑+85 °C) temperature ranges. Assembly, soldering, and replacement procedures are also described.
| Data retention time | 10 years |
|---|---|
| Supply voltage (DS1245Y) | 4.5 V – 5.5 V (typical 5.0 V) |
| Supply voltage (DS1245AB) | 4.75 V – 5.25 V (typical 5.0 V) |
| Operating temperature (commercial) | 0 °C to 70 °C |
| Operating temperature (industrial) | -40 °C to +85 °C |
| Read cycle time | 70 ns – 85 ns |
| Access time | 70 ns – 85 ns |
| Write pulse width | 55 ns – 65 ns |
| Input leakage current | -1 µA to +1 µA |
| Input capacitance | 5 pF – 10 pF |
The device retains data for at least 10 years without power.
It operates from 4.5 V to 5.5 V, with a typical value of 5.0 V.
The DS1245 uses 17 address inputs (Ao‑Ajo).
It is offered in a 32‑pin DIP package and a 34‑pin PowerCap Module (PCM).