DALLAS DS1245Y/AB Manual

Update: 30 September, 2023

The DS1245Y/AB 1024k Nonvolatile SRAM features 10 years minimum data retention in the absence of external power and is automatically protected during power loss. It replaces 128k x 8 volatile static RAM, EEPROM or Flash memory, has unlimited write cycles, and is low-power CMOS. Read and write access times are as fast as 70 ns. The lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.

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File format: PDF

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MD5 Checksum: 4EEF4F56CC6DFFAF9114634C1FC465C2

Publication date: 01 June, 2012

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PDF Link: DALLAS DS1245Y/AB Manual PDF