S1T8825B Data Sheet

The S1T8825B is a high-performance dual frequency synthesizer with two integrated high-frequency pre-scalers for RF operation up to 1.3 GHz. It is composed of modulus pre-scalers providing 64 and 66, no dead-zone PFD, selectable charge pump current, selectable power down mode circuits, lock detector output, and loop filter’s time constant switch. It is fabricated using the ASP5HB Bi-CMOS process and is available in a 16-TSSOP package. Serial data is transferred into the S1T8825B via a three-wire interface (CK, DATA, EN).


S1T8825B Data Sheet - cover page
Brand
Samsung
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
16
File format
PDF
File size
180 KB
Published
01 June, 2012
Updated
28 September, 2023
MD5 checksum
5774964CB97DDFFB84CDF9B6E3F220AF

About this manual

The S1T8825B is a dual frequency synthesizer that operates up to 1.3 GHz. It integrates two modulus pre‑scalers (64/66), a dead‑zone‑free phase‑frequency detector, selectable charge‑pump current, and a power‑down mode. The device is fabricated in a Bi‑CMOS process and supplied in a 16‑TSSOP‑44 surface‑mount package.

Typical applications include cordless telephone systems, portable wireless communications, WLANs and other wireless communication systems. The part is controlled via a three‑wire serial interface (CK, DATA, EN) that allows programming of reference dividers, charge‑pump settings and lock‑detector output.

What's inside

  • Introduction
  • Features
  • Ordering Information
  • Applications
  • Pin Description
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Serial Data Input and Timing
  • Control Latch
  • Typical Application Circuit

Specifications

Typical operating current consumption7.0 mA @ 3.0 V
Power dissipation600 mW
Modulus pre‑scaler64 / 66
Dead‑zone PFDNo dead‑zone

Frequently asked questions

What is the typical operating current consumption?

Typical current consumption is 7.0 mA at a 3.0 V supply.

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