This document is about HYB39S256400D[C/T](L) HYB39S256800D[C/T](L) HYB39S256160D[C/T](L) 256-MBit Synchronous DRAM SDRAM products' datasheet.
 HYB39S256800D[C/T](L) HYB39S256160D[C/T](L) 256-MBit Synchronous DRAM SDRAM - cover page](/uploads/covers/1f/1f09ae7107a5662e3fb6c769f9a9229f.jpg)
The Infineon HYB39S256xxx series are 256‑Mbit synchronous DRAMs offered in three density variants (400 Mbit, 800 Mbit, 160 Mbit) and in x4, x8, and x16 organizations. They operate with a single 3.3 V + 0.3 V supply and support standard SDRAM commands, auto‑refresh, and self‑refresh modes.
The devices are available in plastic P‑TSOPII‑54 (400 mil) and chip‑scale P‑TFBGA‑54 packages, with features such as programmable CAS latency, burst length, and wrap sequence, and a maximum clock frequency up to 166 MHz depending on the speed grade.
| Operating Temperature | Up to 70 °C |
|---|---|
| Supply Voltage | Single 3.3 V + 0.3 V |
| Refresh Cycles | 8192 refresh cycles per 64 ms |
The devices operate up to 70 °C.
They require a single 3.3 V + 0.3 V power supply.