The HYB 5116400BJ/BT 4M x 4-DRAM is a 16MBit dynamic random access memory organized as 4194304 words by 4-bits. The HYB 5116400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5116400BJ/BT to be packaged in a standard SOJ 26/24 or TSOPII-26/24 plastic package, both with 300 mil width. These packages provide high system interconnectability, high reliability and cost effectiveness.
The HYB5116400BJ/BT is a 4 M × 4‑bit (16 Mbit) dynamic RAM organized as 4 194 304 words by 4 bits. It is fabricated with a sub‑micron CMOS process and offered in standard P‑SOJ‑26/24 or P‑TSOPII‑26/24 plastic packages (300 mil width). The device supports a single +5 V (+10 %) supply and is fully TTL‑compatible, providing features such as fast page mode, various refresh modes, and test mode.
Electrical characteristics include access times ranging from 50 ns to 70 ns (RAS) and 13 ns to 20 ns (CAS), low power dissipation (down to 440 mW), and operation over a temperature range of –40 °C to 70 °C. Detailed timing parameters, DC/AC characteristics, and package outlines are provided for designers.