DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-range condition and resets the processor when the condition is detected.
The DS1345Y/AB is a 1024 kbit nonvolatile SRAM that includes an integrated lithium backup battery and power‑monitoring circuitry. It offers 10‑year data retention without external power, automatic write protection on power loss, and optional industrial temperature operation.
The document provides electrical characteristics (read/write cycle times 70‑100 ns, standby current 50 µA), absolute maximum ratings, recommended operating conditions, timing diagrams, and mechanical dimensions for the 34‑pin PowerCap module. Assembly guidelines for reflow and hand soldering, as well as replacement procedures for the Low Profile Module, are also included.
| Typical standby current | 50 µA |
|---|---|
| Data retention time | 10 years |
| Read cycle time | 70‑100 ns |
| Write cycle time | 70‑100 ns |
| Power supply voltage (DS1345AB) | 4.75‑5.25 V |
| Power supply voltage (DS1345Y) | 4.5‑5.5 V |
| Input leakage current | -1.0 to +1.0 µA |
| Operating current | 85 mA |
The typical standby current is 50 µA.
Data can be retained for at least 10 years without external power.
It performs periodic battery voltage monitoring every 24 hours, testing the battery for one second each cycle.
The power‑switching circuit connects the lithium energy source to the RAM to retain data.