This document provides technical specifications for the MOSPEC D44VM Series (NPN) and D45VM Series (PNP) complementary silicon power transistors. These devices are designed for specific and general-purpose applications including output and driver stages of amplifiers, shunt and switching regulators, and high-frequency inverters/converters operating from DC to greater than 1.0MHz.
| Collector-Emitter Voltage (Max) | 30 to 80 V |
|---|---|
| Total Power Dissipation | 50 W |
| Collector Current (Continuous) | 8.0 A |
| Base Current | 15 A |
| Thermal Resistance Junction to Case (Rθjc) | 2.5 °C/W |
They are designed for output and driver stages of amplifiers, shunt and switching regulators, and high frequency inverters/converters.
The total power dissipation at Tj=25°C is 50 Watts.
The D44VM Series has a minimum hFE of 40 at Ig=4.0A, while the D45VM Series has a minimum hFE of 20.