HUF75307P3, HUF75307D3, HUF75307D3S 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75307.
This datasheet describes the HUF75307P3, HUF75307D3, and HUF75307D3S N-Channel UltraFET Power MOSFETs. These devices are manufactured using the innovative UltraFET process to achieve low on-resistance and are designed for applications requiring power efficiency, such as switching regulators, motor drivers, and power management in portable products.
The document provides absolute maximum ratings, electrical specifications, and typical performance curves for the devices. It includes detailed information on package types (TO-220AB, TO-251AA, TO-252AA), thermal characteristics, switching specifications, and gate charge data. Additionally, it offers PSPICE simulation models and related literature references for circuit design.
| Drain Current (Continuous) | 15A |
|---|---|
| Drain to Source Voltage | 55V |
| On Resistance | 0.090 Ohm |
| Turn-Off Time | 100 ns |
The part numbers are HUF75307P3, HUF75307D3, and HUF75307D3S.
The device supports a continuous drain current of 15A.
They are intended for switching regulators, motor drivers, relay drivers, low-voltage bus switches, and power management in portable products.