This document describes the HUF75321D3 and HUF75321D3S, which are N-Channel power MOSFETs with a current rating of 20A and a voltage rating of 55V. These MOSFETs are manufactured using the UltraFET™ process, which results in the lowest possible on-resistance per silicon area and excellent performance. They can withstand high energy in avalanche mode and have a diode with low reverse recovery time and stored charge. These devices are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
The document provides a comprehensive technical overview of the HUF75321D3 and HUF75321D3S devices, which are manufactured using Intersil's innovative UltraFET process. These N-Channel power MOSFETs feature an on-resistance of 0.036 Ohm and are designed for high-efficiency applications such as switching regulators, motor drivers, and low-voltage bus switches.
| Drain Current (Continuous) | 20A |
|---|---|
| Drain to Source Voltage | 55V |
The devices are rated for a continuous drain current of 20A and a drain-to-source voltage of 55V.