This document describes the features and characteristics of HUF75309P3, HUF75309D3, and HUF75309D3S, which are N-Channel UltraFET power MOSFET devices. These devices are manufactured using the innovative UltraFET process, which achieves low on-resistance and outstanding performance. They can withstand high energy in avalanche mode, and the diode exhibits low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
This document provides a comprehensive technical overview of the HUF75309P3, HUF75309D3, and HUF75309D3S N-Channel UltraFET Power MOSFETs. These devices utilize an innovative process to achieve low on-resistance and are designed for applications requiring high power efficiency, such as switching regulators, motor drivers, and power management in portable products.
The datasheet includes absolute maximum ratings, detailed electrical specifications for off-state, on-state, and switching parameters, as well as capacitance and thermal characteristics. It also presents typical performance curves and provides PSPICE and SABER simulation models for circuit design.
| Thermal Resistance Junction to Case | 27 °C/W |
|---|---|
| Thermal Resistance Junction to Ambient (TO-220) | 62 °C/W |
| Thermal Resistance Junction to Ambient (TO-251, TO-252) | 100 °C/W |
| Drain to Source On Resistance | 0.070 Ω |
Yes, Temperature Compensated PSPICE and SABER Models are available on the web.