The document describes the features and characteristics of the HUF75309T3ST model, which is an N-Channel power MOSFET device. This device is manufactured using the innovative UltraFET process, resulting in low on-resistance, high energy capability, and low reverse recovery time. It is suitable for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
The document describes the Intersil HUF75309T3ST, an N-channel power MOSFET manufactured using the innovative UltraFET process. This device is designed for applications requiring high efficiency, such as switching regulators, motor drivers, and low-voltage bus switches. It features a very low on-resistance of 0.070 Ohms and exhibits both high speed and soft recovery characteristics in its diode.
| On-Resistance (Typical) | 0.070 Ohm |
|---|---|
| Package Type | SOT-223 |
| Operating Temperature Range | -55 to 150°C |