This is a Intersil HUF75229P3 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET, which is manufactured using the innovative UltraFET™ process, which achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.
The document is a datasheet for the Intersil HUF75229P3, an N-Channel UltraFET Power MOSFET designed for high-efficiency applications such as switching regulators, converters, and motor drivers. The device utilizes the UltraFET process to achieve low on-resistance and high avalanche energy capability.
Key specifications include a drain current of 44A, a drain-to-source voltage rating of 50V, and a typical on-resistance of 0.022 Ohms. The datasheet details absolute maximum ratings, electrical specifications, typical performance curves, and provides a PSPICE electrical model and a SPICE thermal model for circuit simulation.
| Drain Current (Continuous) | 44A |
|---|---|
| Drain to Source Voltage | 50V |
| On-Resistance (Typical) | 0.022 Ohms |
| Package Type | TO-220AB |
| Operating Temperature Range | -55 to 175°C |
The part number is HUF75229P3.
The typical on-resistance is 0.022 Ohms.
Yes, the datasheet includes a PSPICE Electrical Model and a SPICE Thermal Model.