This document describes an N-channel UltraFET power MOSFET, which is manufactured using the innovative UltraFET™ process. The device offers outstanding performance with low on-resistance and low reverse recovery time, making it suitable for applications where power efficiency is important.
The document describes the Intersil HUF75307T3ST, an N-Channel power MOSFET manufactured using the UltraFET process. It is designed for applications requiring high efficiency, such as switching regulators, motor drivers, and low-voltage bus switches. The device features a very low on-resistance of 0.090 Ohms and exhibits soft recovery characteristics in its internal diode.
| On-Resistance (Typical) | 0.090 Ohm |
|---|---|
| Package Type | SOT-223 |
| Operating Temperature Range | -55 to 150 °C |
The typical on-resistance (rDS(on)) is 0.090 Ohms.
The device is available in an SOT-223 package.
Yes, it is designed for use in applications such as switching regulators and motor drivers.