This document is the specification of ASI UML3, which introduces the features and characteristics of the product.
The ASI UML3 is an NPN silicon RF power transistor designed for high-frequency applications. It utilizes the Omnigold™ Metalization System and is packaged in a 4L stud style.
| Collector-Emitter Voltage (Vceo) | 60 V |
|---|---|
| Emitter-Base Voltage (Vebo) | 4.0 V |
| Collector Current (Ic) | 10 A |
| Power Dissipation (Pd) | 140 W |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
| Input Capacitance (Cob) | 6.0 pF |
| Power Gain (Po) | 12 dB |
The maximum power dissipation is 140 W when the case temperature is 25 °C.
The device operates from -65 °C to +200 °C.
The maximum collector-emitter voltage is 60 V.