This is the PDF datasheet of ASI UML1T.
The ASI UML1T is an NPN silicon RF power transistor designed in a TO-39 package. It features the Omnigold™ Metalization System and is manufactured by Advanced Semiconductor, Inc.
This document provides the maximum ratings for current, voltage, and power dissipation, along with typical electrical characteristics such as breakdown voltages and gain at specific frequencies.
| Package Type | TO-39 |
|---|---|
| Collector-Emitter Voltage (Vceo) | 55 V |
| Collector-Base Voltage (Vcbo) | 3.5 V |
| Power Dissipation (Pdiss) | 5.0 W @ To = 25°C |
The ASI UML1T is an NPN silicon RF power transistor designed for use in a TO-39 package.
The device has a maximum collector current of 0.4A and a maximum collector-emitter voltage of 55 V.
The maximum power dissipation is 5.0 W when the temperature is 25°C.
The transistor operates from -65 °C to +200 °C and can be stored in the same range.