Philips BLF1822-10 UHF Power LDMOS Transistor Datasheet

BLF1822-10 is a UHF power LDMOS transistor with the following features: output power of 10W, gain of 18.5dB at 900MHz, 13.5dB at 2200MHz, efficiency of 39% at 900MHz, 34% at 2200MHz, dim of -31dBc at 900MHz, -28dBc at 2200MHz, etc.


Philips BLF1822-10 UHF Power LDMOS Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
16
File format
PDF
File size
158 KB
Published
06 July, 2012
Updated
29 September, 2023
MD5 checksum
65634821198255EDC0C58AC187A2C2F5

About this manual

This document is a product specification datasheet for the Philips BLF1822-10, a 10 W UHF power LDMOS transistor designed for broadband operation from HF to 2200 MHz. It is intended for use in RF power amplifiers for GSM, EDGE, CDMA, and W-CDMA base stations, as well as broadcast drivers. The device features a typical output power of 10 W (PEP) and operates in a common source class-AB circuit.

What's inside

  • Features
  • Applications
  • Limiting Values
  • Thermal Characteristics
  • Electrical Characteristics
  • Application Information
  • Test Circuit
  • Component List

Specifications

Output Power10 W (PEP)
Gain at 900 MHz18.5 dB
Gain at 2200 MHz13.5 dB
Efficiency at 900 MHz39%
Efficiency at 2200 MHz34%
Drain-Source Voltage65 V
Drain Current (DC)2.2 A
Operating Frequency RangeHF to 2200 MHz

Frequently asked questions

What is the typical intermodulation distortion at 900 MHz?

The typical intermodulation distortion is -31 dBc at 900 MHz.

Is the transistor suitable for class-AB operation?

Yes, the RF performance data is provided for CW, class-AB (2-tone) operation.

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