The BLF6G10LS-200R is a 200W LDMOS power transistor from NXP, suitable for base station applications in the frequency range of 800MHz to 1000MHz.
This document is a preliminary datasheet for the BLF6G10LS-200R Power LDMOS transistor manufactured by NXP Semiconductors. The device is specifically engineered as a 200 W power amplifier for base station applications operating in the frequency range of 800 MHz to 1000 MHz, supporting modes such as GSM, EDGE, W-CDMA, and CDMA.
| Average output power (Typical) | 40 W |
|---|---|
| Power gain (Typical) | 20 dB |
| Efficiency (Typical) | 27.5 % |
| ACPR (Typical) | -40 dBc |
The device operates at frequencies from 800 MHz to 1000 MHz.
The typical supply voltage (VDS) is 28 V.