The BLF6G10LS-200 is a 200 W LDMOS power transistor from NXP Semiconductors for base station applications at frequencies from 800 MHz to 1000 MHz.
The document describes the BLF6G10LS-200, a Power LDMOS transistor intended for RF power amplifiers in GSM, EDGE, W-CDMA, and CDMA base stations operating from 800 MHz to 1000 MHz. Key features include typical average output power of 40 W, 20 dB power gain, and efficiency up to 27% at a supply voltage of 28 V.
| Frequency range | 800 MHz to 1000 MHz |
|---|---|
| Average output power | 40 W |
| Power gain | 20 dB |
| Efficiency | 27 % |
The maximum drain-source voltage is 65 V.
The typical power gain is 20 dB at an output power of 40 W.
The thermal resistance from junction to case is 0.34 K/W at a case temperature of 80°C.