Industrial

The LMC6081 is a precision low offset voltage operational amplifier that is capable of single supply operation. Performance characteristics include ultra low input bias current, high voltage gain, rail-to-rail output swing, and an input common mode voltage range that includes ground.

The NE5532 is a high-performance operational amplifier from Texas Instruments that combines excellent dc and ac characteristics. It features very low noise, high output-drive capability, high unity-gain and maximum-output-swing bandwidths, low distortion, high slew rate, input-protection diodes, and output short-circuit protection. These operational amplifiers are compensated internally for unity-gain operation. These devices have specified maximum limits for equivalent input noise voltage.

The 5532 is a dual high-performance low noise operational amplifier from Philips Semiconductors. Compared to most of the standard operational amplifiers, such as the 1458, it shows better noise performance, improved output drive capability and considerably higher small-signal and power bandwidths. This makes the device especially suitable for application in high-quality and professional audio equipment, instrumentation and control circuits, and telephone channel amplifiers.

The NE5532, NE5532A, SA5532, and SA5532A are high-performance operational amplifiers combining excellent dc and ac characteristics. They feature very low noise, high output-drive capability, high unity-gain and maximum-output-swing bandwidths, low distortion, high slew rate, input-protection diodes, and output short-circuit protection. These operational amplifiers are compensated internally for unity-gain operation. These devices have specified maximum limits for equivalent input noise voltage.

LMC6062 is a low-power operational amplifier from National Semiconductor. It has low offset voltage, high gain, wide output swing and is suitable for battery powered applications.

The NE552R479A is NEC's N-channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for mobile and fixed wireless applications.

The NE/SA/SE5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the primary of the LVDT/RVDT, a synchronous demodulator to convert the LVDT/RVDT output amplitude and phase to position information, and an output amplifier to provide amplification and filtering of the demodulated signal.

The LMC6061 is a high quality, low power operational amplifier with low offset voltage, high voltage gain, high output swing, and high common mode voltage range. It is ideal for battery powered applications.

The document describes an N-channel silicon power MOSFET called NE5520379A, which is designed as the transmission power amplifier for 3.2V GSM900 handsets. It features high output power, high linear gain, and high power added efficiency.

NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2V GSM900 handsets. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function.

NE5520279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. It can be operated at up to 6 V for higher power, Fixed Wireless Access applications.

NE5520279A is a low cost, high performance, high reliability LD-MOSFET from NEC, suitable for 0.7-2.5GHz fixed wireless, mobile wireless and other applications.

The AU5517/NE5517 is a dual operational transconductance amplifier with a differential input and push-pull output.