This data sheet is about BCW60ALT1/D, which is a NPN silicon small signal transistor with a maximum collector-emitter voltage of 32Vdc, a maximum collector-base voltage of 32Vdc, a maximum emitter-base voltage of 5.0Vdc and a maximum collector current of 100mAdc.
This document provides technical data for the Motorola BCW60ALT1, BCW60BLT1, and BCW60DLT1 NPN silicon general purpose transistors. It details maximum ratings, electrical characteristics including DC and AC current gain, and switching parameters for these devices housed in SOT-23 (TO-236AB) packages.
| Collector Current | 100 mAdc |
|---|---|
| Total Device Dissipation (FR-5 Board) | 225 mw |
| Thermal Resistance Junction to Ambient (FR-5) | 556 °C/W |
| Junction and Storage Temperature | -55 to +150 °C |
The continuous collector current rating is 100 mAdc.
The junction and storage temperature range is -55 to +150 °C.