This document describes the features and characteristics of the NPN silicon AF transistors BCW 60 and BCX 70 introduced by the Semiconductor Group. These transistors are suitable for AF input stages and driver applications, and have high current gain, low collector-emitter saturation voltage, low noise between 30 Hz and 15 kHz, etc.
This document is a datasheet for the Siemens BCW 60 and BCX 70 series of NPN silicon AF transistors. These components are designed for AF input stages and driver applications, offering high current gain and low noise performance between 30 Hz and 15 kHz. The datasheet includes complementary PNP types (BCW 61 and BCX 71) and provides detailed ordering codes for various suffixes.
| Junction temperature | 150 °C |
|---|
They are intended for AF input stages and driver applications.
The complementary types are BCW 61 and BCX 71 (PNP).
The transistors feature low noise between 30 Hz and 15 kHz.