This document describes the maximum ratings, thermal characteristics, and electrical characteristics of LESHAN RADIO COMPANY, LTD. M11–1/2 1 3 2 General Purpose Transistors NPN Silicon.
This document is a datasheet for the BCW65ALT1 NPN silicon general purpose transistor manufactured by LESHAN RADIO COMPANY. It provides comprehensive technical specifications including maximum ratings, thermal characteristics, and device marking information.
| Collector–Emitter Voltage | 32 Vdc |
|---|---|
| Collector Current | 800 mAdc |
| Total Device Dissipation (FR–5 Board) | 225 mW |
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | 417 °C/W |
| Junction and Storage Temperature | –55 to +150 °C |
| DC Current Gain (IC= 10 mAdc) | 75 to 220 |
| Current–Gain — Bandwidth Product | 100 MHz |
| Turn–On Time | 100 ns |
The maximum continuous collector current is 800 mAdc.
The junction and storage temperature range is from –55 to +150 °C.
The DC current gain ranges from 75 to 220 at 10 mAdc collector current.