This data sheet contains BCW61BLT1 data sheet, which mainly contains the maximum rating, thermal characteristics, device marking, electrical characteristics and other information.
This document provides technical specifications for the JRC BCW61 series of PNP silicon general purpose transistors. The devices are available in three variants: BCW61BLT1, BCW61CLT1, and BCW61DLT1, housed in SOT-23 (TO-236AB) packages. The datasheet details maximum ratings, thermal characteristics, and device marking codes.
| Collector-Emitter Voltage | -32 Vdc |
|---|---|
| Collector Current | -100 mAdc |
| Junction and Storage Temperature | -55 to +150 °C |
| DC Current Gain (BCW61D) | 100 to 100 |
The maximum continuous collector current rating is 100 mAdc.
The total device dissipation is 205 mw when mounted on an FR-5 board.
The junction and storage temperature range from -55 to +150 °C.