Industrial

The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications.

The IR2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications.

The IR2110L6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

This datasheet describes the features of IR2110E6 high and low side driver. The driver supports +600V floating channel design, can work normally under negative transient voltage and has dV/dt immunity. Its gate drive supply range is from 10 to 20V, has undervoltage lockout function. The logic supply range is from 5 to 20V, the logic and power ground voltage offset is ±5V. The driver has CMOS Schmitt-triggered inputs with pull-down resistor, has cycle by cycle edge-triggered shutdown logic, and the propagation delay of both channels is matched, and the outputs are synchronized with the inputs.

The IR2110L4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts.

The IR2110L4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

IR2110E4 is a high-low side driver produced by IR company. Its working voltage range is 10-20V, output voltage range is 10-20V, output current is +/-2A/2A, and delay matching is 10ns.

The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts. The product has various features such as a floating channel designed for bootstrap operation, compatibility with standard CMOS or LSTTL output for logic inputs, and matched propagation delay.

This document describes the main features and characteristics of the IR210SG12HCB model, including the maximum on-state voltage, reverse breakdown voltage, maximum DC gate current required to trigger, and maximum DC gate voltage required to trigger. It also includes information on the mechanical characteristics and dimensions of the product.

IR210SG12HCB is a 210 square millimeter thyristor produced by International Rectifier. The rated reverse breakdown voltage of the thyristor is 1200 V, the maximum on-state voltage is 1.5 V, the maximum trigger current is 60 mA, the maximum trigger voltage is 1.9 V, the maximum holding current range is 10 to 125 mA, and the maximum latching current is 200 mA.

This document describes the features and characteristics of the IR210DG..HCB series products.

The IR2301(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

IR21093 is a high voltage, high speed power MOSFET and IGBT driver from IR company. It features a floating channel design and is suitable for use in switching power supplies, inverters and other applications.

The document describes a typical half-bridge driver with features such as floating channel, positive and negative offset power supply, low di/dt gate driver, and cross-conduction prevention.