This datasheet describes the features of IR2110E6 high and low side driver. The driver supports +600V floating channel design, can work normally under negative transient voltage and has dV/dt immunity. Its gate drive supply range is from 10 to 20V, has undervoltage lockout function. The logic supply range is from 5 to 20V, the logic and power ground voltage offset is ±5V. The driver has CMOS Schmitt-triggered inputs with pull-down resistor, has cycle by cycle edge-triggered shutdown logic, and the propagation delay of both channels is matched, and the outputs are synchronized with the inputs.
The IR2110E6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It utilizes proprietary HVIC and latch immune CMOS technologies for ruggedized monolithic construction. The device features floating channel operation designed for bootstrap applications and can operate up to 600V.
| Maximum Offset Supply Voltage | 600V |
|---|---|
| Gate drive supply range | 10 to 20V |
| Logic and power ground offset | +5V |
| Turn-On Propagation Delay (Typ) | 120 ns |
| Delay Matching | 10 ns |
The maximum offset supply voltage (Vs) is 600V.
Yes, the device is tolerant to negative transient voltage with an allowable offset supply voltage transient of up to 50Vins.
The typical turn-on propagation delay (ton) is 120 ns.