The IR2110L6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
The IR2110L6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It utilizes proprietary HVIC and latch immune CMOS technologies for ruggedized monolithic construction. The device is designed to drive N-channel power MOSFETs or IGBTs in high side configurations operating up to 600 volts.
| Maximum Offset Supply Voltage | 600V |
|---|---|
| Gate drive supply range | 10 to 20V |
| Logic supply range | 5 to 20V |
| Turn-On Propagation Delay (typ.) | 120 ns |
| Turn-Off Propagation Delay (typ.) | 94 ns |
| Delay Matching (typ.) | 10 ns |
| Package Power Dissipation | 1.6 W |
| Junction Temperature Range | -55 to 125°C |
The maximum offset supply voltage is 600V.
The gate drive supply range is from 10 to 20V.
The separate logic supply range is from 5 to 20V.