The IR2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications.
The IR2111 is a high voltage, high speed power MOSFET and IGBT driver designed for half-bridge applications. It features proprietary HVIC and latch immune GMOS technologies for ruggedized monolithic construction. The device includes a floating channel for bootstrap operation, capable of driving N-channel power MOSFETs or IGBTs up to 600 volts.
| High Side Floating Supply Voltage | 0.3 to 625 V |
|---|---|
| High Side Floating Supply Offset Voltage | Vg-25 Vg +0.3 |
| High Side Floating Output Voltage | Vg-0.3 Vg+0.3 |
| Low Side and Logic Fixed Supply Voltage | 0.3 to 25 V |
| Low Side Output Voltage | 0.3 to Voc +0.3 |
| Logic Input Voltage | 0.3 to Voc + 0.3 |
| Turn-On Propagation Delay | 850 ns (typ) |
| Turn-Off Propagation Delay | 150 ns (typ) |
| Deadtime | 700 ns (typ) |
| Output High Short Circuit Pulsed Current | 200 to 250 mA |
| Output Low Short Circuit Pulsed Current | 420 to 500 mA |
| Package Types | 8 Lead PDIP / SO-8 |
The maximum high side floating supply voltage is 625 V.
The typical deadtime is 700 ns.
The device is available in 8 Lead PDIP and SO-8 packages.
Yes, the device is tolerant to negative transient voltage.